Comparison of Plasma-Induced Damage in SIO2/TIN and HFO2/TIN Gate Stacks

Author

Young, C.D. ; Bersuker, G. ; Zhu, Feida ; Matthews, K. ; Choi, R. ; Song, S.C. ; Park, H.K. ; Lee, J.C. ; Lee, B.H.

Author_Institution

SEMATECH, Austin, TX

fYear

2007

fDate

15-19 April 2007

Firstpage

67

Lastpage

70

Abstract

SiO₂ and HfO₂> gate dielectrics with TiN electrodes were subjected to an aggressive post-fabrication plasma exposure. A comparison of plate and comb antenna structures before and after exposure demonstrated that the plate antennae structures demonstrate evidence of plasma-induced damage while the comb structures did not. The physical origin of PD in SiO₂ devices was found to be the amphoteric interface states, while the primary effect in HfO₂ devices was charges trapped in the bulk of the high-K film.

Keywords

antennas; dielectric materials; hafnium compounds; interface states; plasma materials processing; silicon compounds; titanium compounds; HfO₂-TiN; SiO₂-TiN; amphoteric interface states; comb antenna structures; gate dielectrics; gate stacks; high-K film; plasma exposure; plasma-induced damage; plate antenna structures; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Probability distribution; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369870

Filename

4227611