Title :
Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI
Author :
Haggag, A. ; Lemanski, M. ; Anderson, G. ; Abramowitz, P. ; Moosa, M.
Abstract :
Product Fmax shift is shown to be mainly due to HCI and NBTI. This is because the likelihood of a TDDB event in the product speed path is negligible. An exponential drain current and voltage dependence of HCI and a power-law gate voltage dependence of NBTI are shown to fit the Fmax shift quite well for realistic guardbands.
Keywords :
semiconductor device models; semiconductor device reliability; statistical analysis; HCI; NBTI; TDDB event; exponential drain current; power-law gate voltage dependence; product shift; product speed path; Bonding; Degradation; Human computer interaction; Intrusion detection; MOSFETs; Niobium compounds; Statistics; Stress; Titanium compounds; Voltage;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369874
