Analytical Study of Impurity Doping Effects on Electromigration of CU Interconnects by Employing Comprehensive Scattering Model

Author

Yokogawa, S. ; Kakuhara, Y. ; Tsuchiya, H. ; Kikuta, K.

Author_Institution

Adv. Device Dev. Div., NEC Electron. Corp., Kanagawa

fYear

2007

fDate

15-19 April 2007

Firstpage

117

Lastpage

121

Abstract

We investigated the impurity (Al) doping effect on resistivity of damascene Cu interconnects with decomposing into surface, grain boundary, and impurity scattering factors by employing comprehensive scattering model. The surface scattering is dominant for resistivity increasing. Electromigration-induced Cu drift is suppressed as Al concentration increases. The electromigration lifetime is improved by suppression of the Cu diffusion due to piled-up Al at the top surface of Cu interconnects.

Keywords

aluminium; copper; electromigration; grain boundaries; integrated circuit interconnections; semiconductor doping; Al; Al concentration; Cu; comprehensive scattering model; damascene Cu interconnects; drift velocity; electromigration lifetime; grain boundary; impurity doping effects; impurity scattering factors; surface scattering; Conductivity; Copper; Doping; Electromigration; Electron mobility; Grain boundaries; Impurities; Life testing; Scattering; Semiconductor process modeling; CuAl; comprehensive scattering model; drift velocity; electromigration; impurity doping; resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369879

Filename

4227620