Plasticity-Amplified Diffusivity: Dislocation Cores as Fast Diffusion Paths in CU Interconnects

Author

Budiman, S. ; Hau-Riege, C.S. ; Besser, P.R. ; Marathe, A. ; Joo, Y.-C. ; Tamura, N. ; Patel, J.R. ; Nix, W.D.

Author_Institution

Dept. of Mater. Sci. & Eng., Stanford Univ., CA

fYear

2007

fDate

15-19 April 2007

Firstpage

122

Lastpage

127

Abstract

The mass transport of Cu during electromigration (EM) testing is typically dominated by interface diffusion. If a mechanism other than interface diffusion begins to affect the overall transport process, then the effective diffusivity, D, of the EM process would deviate from that of interface diffusion only. This would have fundamental implications. We have preliminary evidence that this might be the case, and we report its implications for EM lifetime assessment in this manuscript.

Keywords

copper; electromigration; integrated circuit reliability; life testing; Cu; Cu interconnects; EM lifetime assessment; diffusion paths; dislocation cores; electromigration testing; interface diffusion; plasticity-amplified diffusivity; reliability assessment; transport process; Anodes; Cathodes; Conducting materials; Degradation; Electromigration; Electrons; Light sources; Materials science and technology; Plastics; Testing; Electromigration; dislocation core; plasticity; reliability assessment;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369880

Filename

4227621