Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications

Author

Jee, Jung-Geun ; Kwon, WookHyun ; Lee, Woong ; Park, Jung-Hyun ; Kim, Hyeong-Ki ; Son, Ho-Min ; Chang, Won-Jun ; Han, Jae-Jong ; Hyung, Yong-Woo ; Lee, Hyeon-Deok

Author_Institution

Semicond. R & D center, Samsung Electron. Co., Ltd., Gyeonggi-Do

fYear

2007

fDate

15-19 April 2007

Firstpage

184

Lastpage

189

Abstract

The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.

Keywords

NOR circuits; annealing; flash memories; optimisation; reliability; NOR flash memory; Samsung electronics; annealing; flash memory applications; nitrogen incorporation; optimization; post-cycling bake; re-oxidized tunnel oxide; reliability properties; Annealing; Bonding; Degradation; Flash memory; Hydrogen; Nitrogen; Oxidation; Research and development; Thermal stresses; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369890

Filename

4227631