Title :
Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications
Author :
Jee, Jung-Geun ; Kwon, WookHyun ; Lee, Woong ; Park, Jung-Hyun ; Kim, Hyeong-Ki ; Son, Ho-Min ; Chang, Won-Jun ; Han, Jae-Jong ; Hyung, Yong-Woo ; Lee, Hyeon-Deok
Author_Institution :
Semicond. R & D center, Samsung Electron. Co., Ltd., Gyeonggi-Do
Abstract :
The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.
Keywords :
NOR circuits; annealing; flash memories; optimisation; reliability; NOR flash memory; Samsung electronics; annealing; flash memory applications; nitrogen incorporation; optimization; post-cycling bake; re-oxidized tunnel oxide; reliability properties; Annealing; Bonding; Degradation; Flash memory; Hydrogen; Nitrogen; Oxidation; Research and development; Thermal stresses; Threshold voltage;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369890
