Influence of Hydrogen Permeability of Liner Nitride Film on Program/Erase Endurance of Split-Gate Type Flash EEPROMS

Author

Liu, Ziyuan ; Fujieda, Shinji ; Hayashi, Fumihiko ; Shimizu, Masakuni ; Nakata, Masashi ; Ishigaki, Hirokazu ; Wilde, Markus ; Fukutani, Katsuyuki

Author_Institution

Test & Anal. Eng. Div., NEC Electron. Corp., Kanagawa

fYear

2007

fDate

15-19 April 2007

Firstpage

190

Lastpage

196

Abstract

The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality. Nuclear reaction analysis revealed a difference in H permeability between LPCVD-SiN and plasma SiN liner films, allowing us to correlate H atoms and the endurance degradation.

Keywords

chemical vapour deposition; electron traps; flash memories; hydrogen; interface states; permeability; silicon compounds; CVD tunnel oxide; FN stress; FN-induced traps; LPCVD; SiN; electron trapping; flash EEPROM; hydrogen atoms; hydrogen permeability; interface trap; liner nitride film; nuclear reaction analysis; plasma liner films; program/erase endurance; split-gate type; Degradation; EPROM; Electronic equipment testing; Hydrogen; National electric code; Nonvolatile memory; Permeability; Silicon compounds; Split gate flash memory cells; Stress; FLASH EEPROMs; NRA; P/E endurance; electron trapping; hydrogen permeability; interface trap; split-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369891

Filename

4227632