Role of CU in TDDB of Low-K Dielectrics

Author

Lloyd, J.R. ; Ponoth, S. ; Liniger, E. ; Cohen, S.

Author_Institution

IBM TJ Watson Res. Center, Yorktown Heights, NY

fYear

2007

fDate

15-19 April 2007

Firstpage

410

Lastpage

411

Abstract

The role of Cu in the time dependent dielectric breakdown (TDDB) performance of Cu/low-k integrated systems was studied. Interdigitated comb capacitors with and without Cu incorporated in the structure were temperature bias stressed (BTS). The Cu containing structures failed in a fraction of the time of the Cu-free samples. Annealing for 1200+ hours without bias did not change the failure times as compared to a 5 minute anneal, indicating that diffusion of neutral Cu does not play a role in TDDB. The results can be attributed to field enhanced Cu diffusion in the framework of an "impact damage" TDDB failure model

Keywords

copper; dielectric materials; electric breakdown; metallisation; reliability; 5 mins; BEOL reliability; Cu; impact damage; interdigitated comb capacitors; low-k dielectrics; temperature bias stress; time-dependent dielectric breakdown; Annealing; Capacitors; Couplings; Dielectric breakdown; Electrons; Joining processes; Life testing; Metallization; Performance evaluation; Temperature; BEOL Reliability; Cu metallization; TDDB; low-k dielectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369924

Filename

4227665