• DocumentCode
    2783534
  • Title

    High sensitive THz faraday rotation measurements in doped semiconductors

  • Author

    Ikebe, Yohei ; Shimano, Ryo

  • Author_Institution
    Department of Physics, the University of Tokyo, and 2 PRESTO (JST), 113-0033, Japan
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.
  • Keywords
    Charge carrier density; Dielectrics; Electrochemical impedance spectroscopy; Faraday effect; Laser mode locking; Magnetic materials; Polarization; Rotation measurement; Submillimeter wave measurements; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431086
  • Filename
    4431086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783534