Title :
Schottky-Barrier Carbon Nanotube Field Effect Transistor Modeling
Author :
Hazeghi, Arash ; Krishnamohan, Tejas ; Wong, H. -S Philip
Author_Institution :
Center for Integrated Systems and Department of Electrical Engineering, Stanford University, Stanford, CA 94305. Email: ahazeghi@stanford.edu
Abstract :
The theoretical performance of Carbon Nanotube Field Effect Transistors (CNFETs) with Schottky barriers is examined by means of a ballistic model. A novel approach is used to treat the Schottky barriers at the metal-nanotube contacts as mesoscopic scatterers. Evanescent-mode analysis is used to derive a length-scale and potential profile for the device. Noticeable current reduction is observed compared to previous ballistic models without Schottky barriers. The effects of device geometry, nanotube diameter and chirality as well as Schottky barrier height on the drain current are studied. Quantum conductance degradation due to Schottky barriers is also observed.
Keywords :
CNFET; Schottky barrier; ballistic channel; carbon nanotube transistor; evanescent-mode analysis; CNTFETs; Carbon nanotubes; Contacts; Degradation; Geometry; Nanoscale devices; Particle scattering; Physics; Poisson equations; Schottky barriers; CNFET; Schottky barrier; ballistic channel; carbon nanotube transistor; evanescent-mode analysis;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247618
