Title :
Intersubband transition of AlN/GaN quantum wells in optimized AlN-based waveguide structure
Author :
Shimizu, T. ; Kumtornkittikul, C. ; Iizuka, N. ; Sugiyama, M. ; Nakano, Y.
Author_Institution :
Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153-8904, Japan
Abstract :
We achieved low-power saturation of intersubband absorption at 1.5 ¿m with AlN-based AlN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3.
Keywords :
Absorption; Communication switching; Epitaxial layers; Etching; Gallium nitride; Optical waveguides; Propagation losses; Quantum well devices; Switches; Waveguide transitions;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431094
