• DocumentCode
    2783778
  • Title

    A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors

  • Author

    Moens, P. ; Mertens, J. ; Bauwens, F. ; Joris, P. ; de Ceuninck, W. ; Tack, M.

  • Author_Institution
    AMI Semicond. Belgium, Oudenaarde
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    492
  • Lastpage
    497
  • Abstract
    This paper presents a comprehensive yet physical model for hot carrier degradation in LDMOS transistors. The only model input parameters are the gate and drain voltage Vds and Vgs , the internal device temperature and the device width W. The model allows calculating AC degradation performance out of the DC hot carrier data. A physical explanation of the observed effects is provided, and important differences between LDMOS and standard CMOS are highlighted
  • Keywords
    CMOS integrated circuits; MOSFET; hot carriers; AC degradation; LDMOS transistors; hot carrier degradation; internal device temperature; standard CMOS; Breakdown voltage; CMOS technology; Degradation; Electric variables measurement; Hot carriers; Interface states; Semiconductor device modeling; Stress measurement; Temperature; Time measurement; AC degradation; LDMOS; hot carrier; hot holes; interface states; model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369940
  • Filename
    4227681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783778