DocumentCode :
2783785
Title :
Synthesis of si nanoparticles from freestanding porous silicon (ps) film using ultrasonication
Author :
Kale, Paresh G. ; Solanki, Chetan S.
Author_Institution :
Indian Inst. of Technol. Bombay, Mumbai, India
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Porous Silicon (PS) is one of the established materials and can be used in variety of applications in its different forms. Use of monolayer PS film for synthesis of Si QDs is reported here. Nanometer-sized silicon particles are produced by ultrasonic dispersion of thin films in DI water. PS films are characterized using cross sectional scanning electron microscopy and gravimetric analysis while the Si nanopowder is characterized by Raman spectroscopy, Photoluminescence (PL), UV-visible spectroscopy (UV-vis) and FTIR spectroscopy. Sonication for hours causes breaking and oxidation in the film. This reflects as frequency downshift in Raman spectroscopy. Raman peak are resolved into two peaks to study shell type structure of Si nanopowder synthesized. PL exhibits overall red peak shift. Decreasing Tauc bandgap and sharp absorption edge in UV-vis spectra confirms the presence of oxygenated Si nanoparticles in the material tested, confirmed by FTIR. Analysis of all spectra is explained in terms of shell structured Si nanoparticles with Quantum Confinement Luminescent Centre (QCLC) model.
Keywords :
Fourier transform spectra; Raman spectra; elemental semiconductors; energy gap; infrared spectra; nanofabrication; nanoparticles; photoluminescence; porous semiconductors; red shift; scanning electron microscopy; semiconductor growth; semiconductor quantum dots; silicon; thermal analysis; ultrasonic applications; ultraviolet spectra; visible spectra; FTIR spectroscopy; Raman peak; Raman spectroscopy; SEM; Si; Si nanopowder; Si quantum dots; Tauc bandgap; UV-vis spectra; UV-visible spectroscopy; absorption edge; cross sectional scanning electron microscopy; deionized water; film breaking; film oxidation; freestanding porous silicon film; frequency downshift; gravimetric analysis; monolayer porous silicon film; nanometer-sized silicon particles; oxygenated Si nanoparticles; photoluminescence; quantum confinement luminescent centre model; red peak shift; shell structured Si nanoparticles; shell type structure; ultrasonic dispersion; ultrasonication; Absorption; Films; Nanoparticles; Powders; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5617016
Filename :
5617016
Link To Document :
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