• DocumentCode
    2783856
  • Title

    High-Resolution Characterization of Ultra-Shallow Junctions by Scanning Spreading Resistance Microscopy

  • Author

    Zhang, Li ; Adachi, Kanna ; Tanimoto, Hiroyoshi ; Nishiyama, A.

  • Author_Institution
    Corporate Res. & Dev. Center, Toshiba Corp.
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    516
  • Lastpage
    519
  • Abstract
    The SSRM in vacuum is proven to have sufficiently high spatial resolution for 2D profiling of ultra-shallow junctions of ~10 nm. An extremely small effective probe radius of 0.5 nm has been shown to be available with our SSRM systems. Halo distribution influence on roll-off characteristics has been directly observed. SSRM has been shown to have great potential for 2D characterization of next-generation CMOS devices and other nanostructures.
  • Keywords
    CMOS integrated circuits; MOSFET; nanostructured materials; 2D profiling; MOSFET; halo distribution; high-resolution characterization; nanostructures; next-generation CMOS devices; scanning spreading resistance microscopy; ultra-shallow junctions; Atomic force microscopy; CMOS technology; CMOSFETs; Circuits; Laboratories; Large scale integration; MOSFETs; Pollution measurement; Probes; Spatial resolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369944
  • Filename
    4227685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2783856