New THz emitter device concept based on lateral photo-dember currents

Author

Klatt, G. ; Hilser, F. ; Beck, M. ; Huska, K. ; Bastian, G. ; Dekorsy, T.

Author_Institution

Dept. of Phys., Univ. of Konstanz, Konstanz, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

This paper presents a new concept for the generation of terahertz (THz) radiation. Instead of accelerating carriers in an external bias field as state-of-the-art THz emitters generate THz radiation, the THz radiation is generated by lateral Photo-Dember currents induced by inhomogeneous optical excitation. The principle is proven in the simplest geometry on GaAs.

Keywords

Dember effect; III-V semiconductors; electron mobility; gallium arsenide; hole mobility; photoexcitation; terahertz wave devices; terahertz wave generation; GaAs; THz emitter device; charge carriers; electron mobility; hole mobility; inhomogeneous optical excitation; photo-Dember effect; terahertz radiation generation; unidirectional carrier gradient; Charge carrier processes; Electron mobility; Electron optics; Gallium arsenide; Geometrical optics; High speed optical techniques; Laser excitation; Optical saturation; Stimulated emission; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5191973

Filename

5191973