Title :
Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs
Author :
Coffie, R. ; Chen, Y. ; Smorchkova, I.P. ; Heying, B. ; Gambin, V. ; Sutton, W. ; Chou, Y.C. ; Luo, W.B. ; Wojtowicz, M. ; Oki, A.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
Abstract :
The reaction-diffusion limited trap generation model used to explain MOSFET degradation has been applied to GaN HEMT degradation. An analytical expression to describe the time dependence of RF output power has been derived based on this model. In addition, the voltage and temperature dependence of the fitting parameters have been determined.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; GaN HEMT degradation; MOSFET degradation; RF degradation; trap generation model; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; MODFETs; MOSFET circuits; Power generation; Radio frequency; Temperature dependence; Voltage; GaN; RF degradation; reaction-diffusion;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369954
