DocumentCode
2784048
Title
Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs
Author
Coffie, R. ; Chen, Y. ; Smorchkova, I.P. ; Heying, B. ; Gambin, V. ; Sutton, W. ; Chou, Y.C. ; Luo, W.B. ; Wojtowicz, M. ; Oki, A.
Author_Institution
Northrop Grumman Corp., Redondo Beach, CA
fYear
2007
fDate
15-19 April 2007
Firstpage
568
Lastpage
569
Abstract
The reaction-diffusion limited trap generation model used to explain MOSFET degradation has been applied to GaN HEMT degradation. An analytical expression to describe the time dependence of RF output power has been derived based on this model. In addition, the voltage and temperature dependence of the fitting parameters have been determined.
Keywords
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; GaN HEMT degradation; MOSFET degradation; RF degradation; trap generation model; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; MODFETs; MOSFET circuits; Power generation; Radio frequency; Temperature dependence; Voltage; GaN; RF degradation; reaction-diffusion;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369954
Filename
4227695
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