Title :
The Role of Power Dissipation on the Progressive Breakdown Dynamics of Ultra-Thin Gate Oxides
Author_Institution :
Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra
Abstract :
The connection between the leakage current increase in ultra-thin gate oxides associated with the progressive dielectric breakdown and the power dissipation dynamics at the breakdown spot is investigated. Using a simple equivalent circuit model and the transmission properties of mesoscopic conducting systems, it is shown that the current stabilization during a constant voltage stress is linked to the gradual transfer of dissipated power from the bottleneck of the breakdown path to the semiconductor electrodes.
Keywords :
dielectric materials; electric breakdown; equivalent circuits; leakage currents; mesoscopic systems; dielectric breakdown dynamics; equivalent circuit model; leakage current; mesoscopic conducting systems; power dissipation dynamics; semiconductor electrodes; transmission properties; ultra-thin gate oxides; voltage stress; Breakdown voltage; Dielectric breakdown; Electric breakdown; Electrodes; Equivalent circuits; Leakage current; Power dissipation; Power system modeling; Semiconductor device breakdown; Stress; MOS; breakdown; reliability;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369956
