DocumentCode
2784080
Title
A New "Multi-step" Power-law TDDB Lifetime Model and Boron Penetration Effect on TDDB of Ultra Thin oxide
Author
Liao, P.J. ; Chen, Chia Lin ; Wang, C.J. ; Wu, Kenneth
Author_Institution
Reliability Assurance Div., Taiwan Semicond. Manuf. Co.
fYear
2007
fDate
15-19 April 2007
Firstpage
574
Lastpage
575
Abstract
In this work, the "multi-step" power law TDDB model is proposed for ultra thin oxide. The nitrogen concentration effect on the voltage acceleration slope in p-FET is modeled by the boron penetration, and the voltage acceleration slope can be well explained by the "multi-step" power-law TDDB model.
Keywords
MOSFET; boron; nitrogen; semiconductor device breakdown; semiconductor device models; B; N; TDDB lifetime model; boron penetration effect; multistep power-law model; nitrogen concentration effect; p-FET; ultra thin oxide; voltage acceleration slope; Acceleration; Boron; Breakdown voltage; Charge carrier processes; Electric breakdown; Leakage current; Nitrogen; Power system modeling; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369957
Filename
4227698
Link To Document