Title :
New Insights on Percolation Theory and the Origin of Oxide Breakdown Thickness and Process Deposition Dependence
Author :
Ribes, G. ; Rafik, M. ; Barge, D. ; Kalpat, S. ; Denais, M. ; Huard, V. ; Roy, D.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
In this paper we are using the MVHR model in order to better understand the percolation theory and the impact of gate oxide process conditions.
Keywords :
electric breakdown; percolation; MVHR model; gate oxide breakdown thickness; percolation theory; process deposition dependence; Bonding; Breakdown voltage; Character generation; Electric breakdown; Electrons; Hydrogen; Interface states; Physics; Plasma measurements; Plasma temperature; Breakdown; Hydrogen; ultra-thin oxide;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369959
