Title :
Power Performance Characteristics of SiGe Power HBTs at Extreme Temperatures
Author :
Wang, Guogong ; Qin, Guoxuan ; Zhenqiang Ma ; Pingxi Ma ; Racanelli, Marco ; Ponchak, George E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
This paper presents the RF (6 GHz) power performance characteristics of SiGe power HBTs at cryogenic (77K) and high operation temperature (chuck temperature 120deg C, junction temperature up to 160degC). It shows that, without specific device optimizations for cryogenic operation, the power SiGe HBTs exhibit excellent large-signal characteristics at 77K. Comparing with room-temperature operation, similar power gain, output power and PAE were obtained when the devices were operated at the cryogenic temperature. The SiGe power HBTs also operate well at high junction temperature with reasonable power gain and output power degradations. The modeling of the SiGe power HBTs under high operation temperature indicates significant increase of base resistance (RB) and emitter resistance (RE) that account for the degradation of power performance of these devices.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; 120 C; 6 GHz; 77 K; SiGe; SiGe power HBT; base resistance; cryogenic temperature; emitter resistance; high junction temperature; power performance characteristics; Cooling; Cryogenics; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; High temperature superconductors; Power measurement; Radio frequency; Silicon germanium; Temperature sensors;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369962
