• DocumentCode
    2784275
  • Title

    Novel Robust High Voltage ESD Clamps for LDMOS Protection

  • Author

    Walker, A.J. ; Ward, S.T. ; Puchner, H.

  • Author_Institution
    Cypress Semicond., San Jose, CA
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    596
  • Lastpage
    597
  • Abstract
    Novel robust high voltage LDMOS ESD clamps with embedded SCR´s have been TLP tested and implemented in products showing these approaches to be especially useful in overcoming the inherent ESD weakness of LDMOS devices.
  • Keywords
    MOSFET; electrostatic discharge; thyristors; LDMOS ESD clamps; LDMOS devices; LDMOS protection; SCR; Breakdown voltage; CMOS process; CMOS technology; Clamps; Electric breakdown; Electrostatic discharge; Pins; Protection; Robustness; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369968
  • Filename
    4227709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2784275