Title :
Waveform measurement technique and its applications to optimum loading studies on power FETs
Author :
Wei, C.J. ; Tkachenko, Y.A. ; Bartle, D.
Author_Institution :
Alpha Ind. Inc., Woburn, MA, USA
Abstract :
Microwave waveform measurement techniques on power transistors and power amplifiers are reviewed. Techniques of both low-impedance technique in a load-pull system and high-impedance internal node probing, including calibration approaches are presented. Applications of the low-impedance waveform technique are demonstrated in finding the optimum harmonic loads of power PHEMTs to achieve best power added efficiency (PAE). Measured versus simulated results show very good agreement and therefore verify the measurement technique. It has been shown that as high as 83% power added efficiency can be achieved under the inverse-F harmonic loading condition. Also the good agreement of high-impedance probing on a GSM power amplifier with simulated results validates the internal-node probing technique
Keywords :
MMIC power amplifiers; integrated circuit measurement; integrated circuit testing; microwave field effect transistors; microwave measurement; microwave power amplifiers; microwave power transistors; power HEMT; power field effect transistors; semiconductor device measurement; 83 percent; GSM power amplifier; calibration approaches; high-impedance internal node probing; inverse-F harmonic loading condition; load-pull system; low-impedance technique; microwave waveform measurement technique; optimum harmonic loads; optimum loading studies; power FETs; power PHEMTs; power added efficiency; power transistors; Calibration; GSM; High power amplifiers; Measurement techniques; Microwave amplifiers; Microwave theory and techniques; PHEMTs; Power amplifiers; Power system harmonics; Power transistors;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895775
