Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

Author

Ban, Keun-Yong ; Kuciauskas, Darius ; Bremnerand, Stephen P. ; Honsberg, Christiana B.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2010

fDate

20-25 June 2010

Abstract

InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions was investigated by photoluminescence (PL). The peak position of 8% and 13% Sb sample does not shift while that of 15% Sb sample was blue-shifted with increasing the excitation power. In addition, time-resolved PL (TRPL) data also show that 15% Sb sample has a much longer PL decay time compared to that of 8% and 13% Sb sample, implying that the transformation from type I to II occurs between 13% and 15% Sb composition. It is noted that the improvement of QD uniformity was achieved by an increase of a Sb composition in the GaAsSb barrier due to a Sb surfactant effect.

Keywords

III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; spectral line shift; InAs-GaAsSb; PL decay time; blue shift; quantum dot; time-resolved photoluminescence; valence band offset; Epitaxial growth; Laser applications; Lead; Measurement by laser beam; Nitrogen; Photodetectors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE

Conference_Location

Honolulu, HI

ISSN

0160-8371

Print_ISBN

978-1-4244-5890-5

Type

conf

DOI

10.1109/PVSC.2010.5617048

Filename

5617048