An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies

Author

Chatterjee, Amitabh ; Pendharkar, Sameer ; Lin, Yen-Yi ; Duvvury, Charvaka ; Banerjee, Kaustav

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

fYear

2007

fDate

15-19 April 2007

Firstpage

608

Lastpage

609

Abstract

Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing

Keywords

CMOS integrated circuits; MOSFET; bipolar transistors; electrostatic discharge; nanotechnology; semiconductor device breakdown; semiconductor device models; 90 nm; DENMOS devices; DENMOS transistor; ESD behavior; avalanche injection phenomenon; drain extended NMOS devices; nanometer scale CMOS technologies; parasitic BJT; second breakdown phenomenon; CMOS technology; Current density; Electric breakdown; Electrostatic discharge; MOS devices; Nanoscale devices; Resistors; Silicon; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Conference_Location

Phoenix, AZ

Print_ISBN

1-4244-0919-5

Electronic_ISBN

1-4244-0919-5

Type

conf

DOI

10.1109/RELPHY.2007.369974

Filename

4227715