Author :
Lim, K.-Y. ; Sung, M.G. ; Kim, Y.S. ; Cho, H.-J. ; Lee, S.-R. ; Jang, S.-A. ; Choi, S.-G. ; Lee, Y.-J. ; Oh, T.-K. ; Chun, Y.-S. ; Kim, Y.-H. ; Choi, K.S. ; Kim, K.O. ; Jung, Y.-K. ; Koo, S.-Y. ; Ma, W.-K. ; Han, J.-H. ; Kim, G.H. ; Kim, S.-J. ; Won, S.-R
Abstract :
We compared WSix/WN and Ti/WN diffusion barriers for tungsten dual polymetal gate (W-DPG) application, in terms of device performance and gate oxide reliability. WSix/WN diffusion barrier shows degradation of gate oxide, which is found to be due to the B-N dielectric formation and subsequent breakdown of diffusion barrier. Relatively, Ti/WN diffusion barrier shows excellent device performance in terms of R/O delay and gate oxide reliability
Keywords :
boron; diffusion barriers; nitrogen; random-access storage; titanium; tungsten compounds; B-N; B-N dielectric formation; Ti-WN; Ti/WN diffusion barriers; WSi-WN; WSix/WN diffusion barrier; gate oxide reliability; tungsten dual polymetal gate memory devices; Boron; Capacitance-voltage characteristics; Chemical analysis; Contact resistance; Delay; Dielectrics; Electrodes; Random access memory; Thermal degradation; Tungsten;
