DocumentCode
2784411
Title
A New Method for Failure Analysis with Probing System Based on Scanning Electron Microscope
Author
Nokuo, Takeshi ; Eto, Yoshiyuki ; Marek, Zane
Author_Institution
Semicond. Equip. Div., JEOL Ltd., Tokyo
fYear
2007
fDate
15-19 April 2007
Firstpage
614
Lastpage
615
Abstract
This newly developed instrument can provide new techniques for failure analysis by direct interpretation of AEI and VDIC signatures, and transistor characterization by nanoprobing. These methods enable analysis from the top surface to the bottom of the device. The authors conclude that this instrument provides an effective alternative solution for semiconductor failure analysis.
Keywords
failure analysis; scanning electron microscopy; AEI signatures; VDIC signatures; probing system; scanning electron microscope; semiconductor failure analysis; Acceleration; Business communication; Contacts; Electron beams; Failure analysis; Instruments; Probes; Scanning electron microscopy; Signal detection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.369977
Filename
4227718
Link To Document