DocumentCode :
2784411
Title :
A New Method for Failure Analysis with Probing System Based on Scanning Electron Microscope
Author :
Nokuo, Takeshi ; Eto, Yoshiyuki ; Marek, Zane
Author_Institution :
Semicond. Equip. Div., JEOL Ltd., Tokyo
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
614
Lastpage :
615
Abstract :
This newly developed instrument can provide new techniques for failure analysis by direct interpretation of AEI and VDIC signatures, and transistor characterization by nanoprobing. These methods enable analysis from the top surface to the bottom of the device. The authors conclude that this instrument provides an effective alternative solution for semiconductor failure analysis.
Keywords :
failure analysis; scanning electron microscopy; AEI signatures; VDIC signatures; probing system; scanning electron microscope; semiconductor failure analysis; Acceleration; Business communication; Contacts; Electron beams; Failure analysis; Instruments; Probes; Scanning electron microscopy; Signal detection; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369977
Filename :
4227718
Link To Document :
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