Title :
Determination of Intrinsic Spectra from Frontside & Backside Photon Emission Spectroscopy
Author :
Tan, S.L. ; Toh, K.H. ; Chan, D.S.H. ; Phang, J.C.H. ; Chua, C.M. ; Koh, L.S.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Singapore Nat. Univ.
Abstract :
A model to determine the intrinsic spectra from frontside and backside measured spectra is discussed. The model is then used to derive the intrinsic spectra of a saturated nMOSFET from both front side and backside measured spectra. Although the front side and backside measured spectra differs significantly, the intrinsic spectra derived by the model matches well. This method has also been applied to the case of an emission from nMOSFET due to gate leakage
Keywords :
MOSFET; photoelectron microscopy; semiconductor device models; backside photon emission spectroscopy; frontside photon emission spectroscopy; gate leakage; intrinsic spectra; nMOSFET; Dielectric measurements; Electrochemical impedance spectroscopy; Failure analysis; MOSFET circuits; Microscopy; Photonic integrated circuits; Reflectivity; Silicon; Thickness measurement; Wavelength measurement;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369980
