Title :
Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S. ; Hopkinson, Mark
Author_Institution :
Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
Abstract :
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
Keywords :
Excitons; Gallium arsenide; Indium gallium arsenide; Photoluminescence; Quantum computing; Quantum dot lasers; Quantum dots; Radiative recombination; Temperature; Time measurement;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431146
