• DocumentCode
    2784542
  • Title

    New Understanding of Metal-Insulator-Metal (MIM) Capacitor Degradation Behavior

  • Author

    Hung, Chi-Chao ; Oates, Anthony S. ; Lin, H.C. ; Chang, Percy ; Wang, J.L. ; Huang, C.C. ; Yau, Y.W.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Ltd.
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    630
  • Lastpage
    631
  • Abstract
    This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
  • Keywords
    MIM devices; capacitors; constant current sources; current density; electric breakdown; MIM capacitor degradation behavior; capacitance degradation; constant current stress; dielectric breakdown; metal-insulator interlayer; metal-insulator-metal capacitor; stress current density; Capacitance; Carbon capture and storage; Current density; Degradation; Dielectrics; MIM capacitors; Metal-insulator structures; Permittivity; Plasma temperature; Stress; MIM capacitor; capacitance degradation; charge trapping; metal-insulator interlayer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369985
  • Filename
    4227726