DocumentCode
2784573
Title
Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires
Author
Ferry, D.K. ; Akis, R. ; Cummings, A. ; Gilbert, M.J. ; Ramey, S.M.
Author_Institution
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
415
Lastpage
418
Abstract
Nanoelectronics generally refers to nanometer scale devices, and to circuits and architectures which are composed of these devices. Continued scaling of the devices into the nanometer range leads to enhanced information processing systems. Generally, this scaling has arisen from three major sources, one of which is reduction of the physical gate length of individual transistors. Until recently, this has also allowed an increase in the clock speed of the chip, but power considerations have halted this to levels around 4 GHz in Si. Indeed, there are indications that scaling itself may be finished by the end of this decade. There are now pushes to seek alternative materials for nano-devices that may supplement the Si CMOS in a manner that allows both higher speeds and lower power. In this paper, I will cover some of the impending limitations, and discuss some alternative approaches that may signal continued evolution of integrated circuits beyond the end of the decade.
Keywords
ballistic transport; discrete impurities; nanoelectronics; nanowires; Ballistic transport; Clocks; MOSFET circuits; Material properties; Nanoelectronics; Nanoscale devices; Nanowires; Physics; Semiconductor devices; Solid state circuits; ballistic transport; discrete impurities; nanoelectronics; nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247675
Filename
1717125
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