Simulated annealing and local contrast based anisotropic diffusion method for 1/f noise reduction

Anisotropic diffusion based de-noising methods have been demonstrated for the effectiveness on both noise suppression and edge preservation. However, pulse noise liked spots in the de-noised images and threshold selection are two problems of these methods. This paper presents a simulated annealing and local contrast based anisotropic diffusion method for 1/f noise reduction on the pinned-type complementary metal oxide semiconductor image sensors (CMOS image sensors: CIS). Experimental results reveal that the proposed method is an acceptably good solution to the avoidance of the appearance of the pulse noise liked spots in the de-noised images and the threshold selection.