Title :
New Degradation Phenomena of Stress-Induced Voiding Inside via in Copper Interconnects
Author :
Matsuyama, H. ; Shiozu, M. ; Kouno, T. ; Suzuki, T. ; Ehara, H. ; Otsuka, S. ; Hosoda, T. ; Nakamura, T. ; Mizushima, Y. ; Miyajima, M. ; Shono, K.
Author_Institution :
FUJITSU Ltd., Tokyo
Abstract :
Stress induced voiding inside vias has been investigated in detail using three different kinds of test patterns. Resistance increase which is caused by voiding inside via has been seen larger in "extrusion pattern" than in "wide pattern". The resistance shift depends upon the length of the narrow pattern within the "extrusion pattern". Our new finding is that resistance shift through 10Khour is dominated by the "body metal area". These phenomena can be explained with the effect of vacancy diffusion through the path of the copper and barrier metal side interface.
Keywords :
copper; integrated circuit interconnections; vacancies (crystal); voids (solid); Cu; barrier metal side interface; body metal area; copper interconnects; degradation phenomena; extrusion pattern; resistance shift; stress-induced voiding; vacancy diffusion; Copper; Degradation; Frequency; Geometry; Immune system; Laboratories; Shape; Stress; Temperature dependence; Testing; Copper; Stress Induced Voiding; Stress migration; Voiding inside via; extrusion pattern;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369989
