• DocumentCode
    2784679
  • Title

    Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

  • Author

    Wang, Jen-Pan ; Su, Yan-Kuin ; Chen, Jone F.

  • Author_Institution
    Dept. of Electr. Eng., National Cheng Kung Univ., Tainan
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    646
  • Lastpage
    647
  • Abstract
    This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.
  • Keywords
    copper; electromigration; integrated circuit interconnections; integrated circuit reliability; surface cleaning; Cu; Cu damascene interconnection; Cu stress-induced voiding; electromigration; stressvoiding; surface cleaning; Argon; CMOS technology; Copper; Dielectrics; Electromigration; Surface cleaning; Surface resistance; Testing; Thermal stability; Thermal stresses; dual damascene; electromigration (EM); stress-induced voiding (SIV); stressmigration (SM); stressvoiding (SV);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369993
  • Filename
    4227734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2784679