Title :
Improving the Endurance Characteristics Through Boron Implant at Active Edge in 1 G NAND Flash
Author :
Kang, Daewoong ; Chang, Sungnam ; Seo, Seunggun ; Song, Yongwook ; Yoon, Hojin ; Lee, Eunjung ; Chang, Dongwon ; Lee, Wonseong ; Park, Byung-Gook ; Lee, Jong Duk ; Park, Il Han ; Kang, Sangwoo ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ.
Abstract :
One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow trench isolation (STI) isolated NAND flash cells shrinks and electric field is increased at active edge of STI profile. By adjusting the boron doping of active edge, we decrease not only the electric field but also the trap generation. Also we confirmed the improvement of endurance and bake retention characteristics.
Keywords :
boron; flash memories; integrated circuit reliability; logic gates; Fowler-Nordheim current stressing; NAND flash memory; active edge; bake retention; boron implant; channel width; endurance characteristics; interface traps; oxide traps; shallow trench isolation; tunnel oxide; Boron; Capacitance; Degradation; Doping; Dry etching; Equations; Implants; Nonvolatile memory; Random access memory; Voltage; bake retentioin; boron; electric field; endurance; trap;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369996
