Title :
ZnO Nanowire Field-Effect Transistors: Ozone-Induced Threshold Voltage Shift and Multiple Nanowire Effects
Author :
Ju, Sanghyun ; Lee, Kangho ; Janes, David B. ; Li, Jianye ; Chang, R.P.H. ; Yoon, Myung-Han ; Facchetti, Antonio ; Marks, Tobin J.
Author_Institution :
School of Electrical and Computer Engineering, The Institute for Nanoelectronics and Computing, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
Abstract :
ZnO nanowire field-effect transistors (NW-FETs) employing single nanowires were fabricated, using a self-assembled superlattice (SAS) as the gate insulator. Both depletion-mode and enhancement-mode ZnO NW-FETs were fabricated and characterized. An electrostatic model is proposed to describe observed threshold voltage shift upon optimum ozone treatment. Temperature-dependent current-voltage characteristics of depletion-mode ZnO NW-FETs verify this model, indicating the existence of body current through ZnO nanowires with low activation energy. In addition, NW-FETs that use multiple ZnO nanowires and a SiO2gate insulator were fabricated to achieve higher on-current without significant degradation in on-off current ratio, threshold voltage shift, and subthreshold slopes.
Keywords :
Body current; Multiple nanowires; Schottky barrier; ZnO; Current-voltage characteristics; Degradation; Electrostatics; FETs; Insulation; Self-assembly; Superlattices; Synthetic aperture sonar; Threshold voltage; Zinc oxide; Body current; Multiple nanowires; Schottky barrier; ZnO;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247683
