Title :
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention
Author :
Padovani, A. ; Larcher, Luca ; Pavan, Paolo
Author_Institution :
Dipt. di Ingegneria, Universita di Ferrara
Abstract :
In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.
Keywords :
read-only storage; semiconductor device reliability; NROM devices; electron injection; hole distributions; memory retention; profiling technique; Channel hot electron injection; Charge carrier processes; Electronic mail; Flash memory; Hot carriers; Iron; Paper technology; Scalability; Threshold voltage; Video recording; Flash memory; NROM; device simuations; nitride-based trapping storage; semiconductor device reliability; trapped charge profiling;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369997
