• DocumentCode
    2784740
  • Title

    Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention

  • Author

    Padovani, A. ; Larcher, Luca ; Pavan, Paolo

  • Author_Institution
    Dipt. di Ingegneria, Universita di Ferrara
  • fYear
    2007
  • fDate
    15-19 April 2007
  • Firstpage
    654
  • Lastpage
    655
  • Abstract
    In this work, we presented a new technique to profile hole distribution in NROM devices. The evolution of the nitride charge in cycled cells was monitored. The key role played by holes in NROM retention degradation was identified. Electron injection far from the junction and VT drift in erased NROM cells are successfully explained.
  • Keywords
    read-only storage; semiconductor device reliability; NROM devices; electron injection; hole distributions; memory retention; profiling technique; Channel hot electron injection; Charge carrier processes; Electronic mail; Flash memory; Hot carriers; Iron; Paper technology; Scalability; Threshold voltage; Video recording; Flash memory; NROM; device simuations; nitride-based trapping storage; semiconductor device reliability; trapped charge profiling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    1-4244-0919-5
  • Electronic_ISBN
    1-4244-0919-5
  • Type

    conf

  • DOI
    10.1109/RELPHY.2007.369997
  • Filename
    4227738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2784740