DocumentCode :
2784755
Title :
Single-crystalline ZnO nanowires grown on silicon wafers
Author :
Konenkamp, R. ; Word, R. ; Dosmailov, M.
Author_Institution :
Physics Department, Portland State University, 1719 SW 10th Avenue, Portland, OR 97201, USA
Volume :
2
fYear :
2006
fDate :
17-20 June 2006
Firstpage :
449
Lastpage :
452
Abstract :
We report electrodeposition of single-crystalline ZnO nanowires on Si wafers. Similar wires grown on conductive SnO2/glass substrates show excellent electro-luminescence with visible and ultra-violet spectral contributions. For high doping levels in the n-type Si substrates high-quality nanowires can be grown. For low electron concentrations occurring in weakly n-type wafers or in p-type wafers, nanowire growth is inhibited. For B-doped p-type samples the growth process can be improved by applying external bias light or more cathodic electrode potentials.
Keywords :
ZnO on Si; electrodposition; luminescence; nanowire; Crystallization; Electrodes; Electrons; Glass; Nanowires; Optical films; Silicon; Substrates; Wires; Zinc oxide; ZnO on Si; electrodposition; luminescence; nanowire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
Type :
conf
DOI :
10.1109/NANO.2006.247684
Filename :
1717134
Link To Document :
بازگشت