DocumentCode
2784779
Title
Reliability Studies on Non Planar DRAM Cell Transistor
Author
Lee, Myoung Jin ; Jin, Seonghoon ; Baek, Chang-Ki ; Hong, Sung-Min ; Park, Soo-Young ; Park, Hong-Hyun ; Lee, Sang-Don ; Chung, Sung-Woong ; Jeong, Jae-Goan ; Hong, Sung-Joo ; Park, Sung-Wook ; Chung, In-Young ; Park, Young June ; Min, Hong Shick
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.
fYear
2007
fDate
15-19 April 2007
Firstpage
660
Lastpage
661
Abstract
We have experimentally analyzed the leakage mechanism and device degradations caused by the F-N and hot carrier stresses for the recently developed DRAM cell transistors having deeply recessed channels. We have found the important difference of the leakage mechanism between S-Fin and RCAT, which have each structural benefit in the characteristics of leakage current, so we can suggest the guide lines for device structures simultaneously having each merit in both structures.
Keywords
DRAM chips; leakage currents; semiconductor device reliability; transistors; hot carrier stresses; leakage current; nonplanar DRAM cell transistor; Current measurement; Degradation; Doping; FinFETs; Hot carriers; Leakage current; Nanoscale devices; Random access memory; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location
Phoenix, AZ
Print_ISBN
1-4244-0919-5
Electronic_ISBN
1-4244-0919-5
Type
conf
DOI
10.1109/RELPHY.2007.370000
Filename
4227741
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