DocumentCode
2784830
Title
A Novel Hole-Based Memory Device Fabricated from Nano ITO Embedded High-k Thin Films
Author
Kuo, Yue ; Lu, Jiang ; Yan, Jiong ; Lin, Chen-Han
Author_Institution
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, MS 3122, College Station, TX 77843-3122, yuekuo@tamu.edu
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
469
Lastpage
472
Abstract
A new type of hole-based memory device composed of a novel indium tin oxide embedded zirconium-doped hafnium oxide high-k film has been fabricated and characterized. It has strong hole retention. When indium tin oxide is replaced with nanocrystalline silicons, it becomes an electron-based memory device. The new material can be used in high-performance nonvolatile memory devices. In principle, CMOS type nonvolatile memories can be fabricated using these two types of devices.
Keywords
CMOS memories; hole memory devices; nano ITO memoaries; nano Si memories; Charge carrier processes; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; Indium tin oxide; Nanocrystals; Nanoscale devices; Nonvolatile memory; Silicon; Thin film devices; CMOS memories; hole memory devices; nano ITO memoaries; nano Si memories;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247689
Filename
1717139
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