Title :
High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices
Author :
Cho, Sung-Man ; Lee, Jeong-Hyun ; Chang, M. ; Jo, M.-S. ; Hwang, H.-S. ; Lee, J.-K. ; Hwang, S.B. ; Lee, Jong-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu
Abstract :
High pressure deuterium annealing was applied to nano-scale strained CMOS devices and its effect was characterized in terms of charge pumping, hot carrier, NBTI and DNBTI stress, and normalized drain current noise spectral density for the first time. The characteristics of tensile stressed NMOS devices were improved by the annealing. But for PMOS, especially compressive stressed devices showed degraded characteristics by the annealing.
Keywords :
CMOS integrated circuits; MOSFET; deuterium; high-pressure techniques; hot carriers; semiconductor device reliability; DNBTI stress; NBTI; charge pumping; high pressure deuterium annealing effect; hot carrier; nano-scale strained CMOS devices; normalized drain current noise spectral density; Annealing; Charge pumps; Compressive stress; Deuterium; Hot carriers; MOS devices; Nanoscale devices; Niobium compounds; Tensile stress; Titanium compounds;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369564
