DocumentCode :
2784944
Title :
Temperature dependence of ultrafast laser ablation efficiency of crystalline silicon
Author :
Yahng, J.S. ; Jeoung, S.C.
Author_Institution :
Division of Advanced Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.
Keywords :
Crystallization; Laser ablation; Optical surface waves; Pulsed laser deposition; Rough surfaces; Silicon; Surface emitting lasers; Surface morphology; Temperature dependence; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431172
Filename :
4431172
Link To Document :
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