Title :
A Quantitative Analysis of Neutron-Induced Multi-Cell Upset in Deep Submicron SRAMs and of the Impact Due to Anomalous Noise
Author :
Kameyama, Hideaki ; Yahagi, Yasuo ; Ibe, Eishi
Author_Institution :
Renesas Technol. Corp., Tokyo
Abstract :
In this work, the multiplicity of neutron-induced upsets of SRAMs with 130/180 nm technologies is analyzed by using several neutron beams and RTSER. The neutron peak-energy dependence of the ratio for MCU to the total number of upsets can be described by Weibull-type function with a threshold energy for the MCU. As a result of the 130nm SRAM test, the probability function of MCU can be approximated as a superposition of an exponential and a Lorentzian. We also demonstrate that the MCU/SEU ratio obtained by real-time measurements (RTSER) cross over the ASER data at around 20-40MeV. This indicates that the MCU obtained from ASER test using high neutron peak energy more than 50MeV tends to lead to an excessive estimation of the MCU/SEU ratio compared to the RTSER measurements. In addition, the effect due to anomalous noise has been studied and the phenomenon could be suggested as some special signs related to a geophysical mechanism and is expected to be investigated further with more analysis.
Keywords :
SRAM chips; semiconductor device noise; semiconductor device reliability; Weibull-type function; anomalous noise; deep submicron SRAM; neutron-induced multicell upset; quantitative analysis; real-time measurements; Counting circuits; Error correction codes; Frequency; Neutrons; Random access memory; Sea level; Sea measurements; Semiconductor device noise; Single event upset; Testing;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369566
