Title :
The Influence of Gate Poly-Silicon Oxidation on Negative Bias Temperature Instability in 3D FinFET
Author :
Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu
Author_Institution :
Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
This paper presents the effects of gate poly-silicon oxidation (GPOX) on negative bias temperature instability (NBTI) in buried channel body-tied and SOI FinFETs for the first time using a measurement technique without a recovery during a NBT-stress test. Gate length dependency of the NBTI on FinFETs with GPOX is analyzed with various gate oxide thicknesses, stress biases, substrate biases, and device structures. In addition, the proposed revamped geometry-aware reaction-diffusion model explains the GPOX effects on 3D FinFET with gate length dependency.
Keywords :
MOSFET; oxidation; semiconductor device models; semiconductor device reliability; silicon-on-insulator; 3D FinFET; SOI FinFET; gate length dependency; gate poly-silicon oxidation; negative bias temperature instability; revamped geometry-aware reaction-diffusion model; Degradation; FinFETs; Hydrogen; Measurement techniques; Negative bias temperature instability; Niobium compounds; Oxidation; Solid modeling; Stress; Titanium compounds; FinFET; GPOX; NBTI; On-the-fly; gate length dependency;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369567
