DocumentCode
2785037
Title
Optimizing the Performance of Carbon Nanotube Transistors
Author
Pourfath, M. ; Kosina, H. ; Selberherr, S.
Author_Institution
Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, A-1040 Wien, Austria, Phone: +43-1-58801/36014, Fax: +43-1-58801/36099, Email: Pourfath@iue.tuwien.ac.at
Volume
2
fYear
2006
fDate
17-20 June 2006
Firstpage
520
Lastpage
523
Abstract
A numerical study of carbon nanotube field effect transistors is presented. The non-equilibrium Green´s function formalism was employed to investigate the static response. Based on the quasi-static approximation, the dynamic response has been determined. The effect of the gate-source and gate-drain spacers on the static and dynamic response of the device was studied. Simulation results suggest that both the dynamic and static characteristics of the device can be improved by appropriately designing the gate-source and gate-drain spacers.
Keywords
CNTFETs; Carbon nanotubes; Charge carrier processes; Electron tubes; FETs; Geometry; Green´s function methods; Microelectronics; Poisson equations; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247702
Filename
1717152
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