Title :
Novel Positive Bias Temperature Instability (PBTI) of N-Channel Mosfets with Plasma Nitrided Oxide
Author :
Huard, V. ; Guerin, C. ; Parthasarathy, C.
Author_Institution :
NXP Semicond., Crolles
Abstract :
This work reports for the first time a new positive bias temperature instability (PBTI) degradation mode in n-channel MOSFETs related to the introduction of plasma nitridation process step. The degradation is explained only by interface traps creation, differently to NBTI on p-channel MOSFETs where hole trapping might be dominant
Keywords :
MOSFET; interface states; nitridation; plasma materials processing; semiconductor device reliability; PBTI degradation mode; interface traps; n-channel MOSFETs; plasma nitridation process; positive bias temperature instability; Degradation; Doping; MOSFETs; Niobium compounds; Nitrogen; Plasma temperature; Ring oscillators; Stress; Titanium compounds; Voltage;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369570
