DocumentCode :
2785130
Title :
The Energy-Driven Hot Carrier Degradation Modes
Author :
Guerin, C. ; Huard, V. ; Bravaix, A.
Author_Institution :
STMicroelectronics, Crolles
fYear :
2007
fDate :
15-19 April 2007
Firstpage :
692
Lastpage :
693
Abstract :
In this work, we confirm that the energy is the driving force of hot carrier effects. In the high energy-, long channel-case, the LEM picture is still valid. But when the energy is lowered, high energy electrons generated by electron-electron scattering (EES) become the dominant contribution to the degradation. Finally, for even lower energy, the hot carrier degradation becomes a composite mode combining both multiple vibrational excitation (MVE) mechanism (Hess, 1999) and medium-energy electrons heated by EES (Rauch, 2001)
Keywords :
MOSFET; electron-electron scattering; hot carriers; semiconductor device reliability; vibrational modes; electron-electron scattering; energy-driven hot carrier degradation modes; high energy electrons; hot carrier effects; medium-energy electrons heating; multiple vibrational excitation mechanism; Bonding; Degradation; Distribution functions; Electrons; Hot carrier effects; Hot carriers; Interface states; Knee; Microelectronics; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
Type :
conf
DOI :
10.1109/RELPHY.2007.369573
Filename :
4227757
Link To Document :
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