Title :
An Investigation of Self-Heating Degradation of Metal Induced Laterally Crystallized N-Type Polysilicon Thin Film Transistors
Author :
Wang, Huaisheng ; Wang, Mingxiang ; Yang, Zhenyu ; Wong, Man
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou
Abstract :
Self-heating degradation of n-type MILC polysilicon TFTs is systematically investigated under different stress powers. Two-stage degradation behaviors with turnaround effect at initial stage are characterized. An anomalous continuous field-effect mobility increase along with its Vg dependence shift is first observed. A consistent model is proposed to understand observed degradation characteristics
Keywords :
crystallisation; semiconductor device reliability; silicon; thin film transistors; degradation behaviors; field-effect mobility; meta induced laterally crystallization; n-type polysilicon thin film transistors; self-heating degradation; turnaround effect; Crystallization; Degradation; Linearity; Microelectronics; Power engineering and energy; Power system reliability; Stress; Temperature control; Thin film transistors; Threshold voltage; field-effect mobility; polysilicon; self-heating degradation; thin film transistors;
Conference_Titel :
Reliability physics symposium, 2007. proceedings. 45th annual. ieee international
Conference_Location :
Phoenix, AZ
Print_ISBN :
1-4244-0919-5
Electronic_ISBN :
1-4244-0919-5
DOI :
10.1109/RELPHY.2007.369574
