• DocumentCode
    2785165
  • Title

    CIGS thin films prepared by sputtering and selenization by using In2Se3, Ga2Se3 and Cu as sputtering targets

  • Author

    Romeo, N. ; Bosio, A. ; Mazzamuto, S. ; Menossi, D. ; Romeo, A.

  • Author_Institution
    Phys. Dept., Univ. of Parma, Parma, Italy
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film.
  • Keywords
    cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor thin films; solar cells; sputter deposition; thin film devices; CIGS thin films; CuInGeSe-CdS; selenization; sputtering; thin film solar cells; Copper; Films; Indium tin oxide; Photovoltaic cells; Sputtering; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5617109
  • Filename
    5617109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785165