SnO2nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

SnO2nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. The SnO2nanorods were in situ grown without additional substrate heating. These nanorods have an average diameter between 19 and 27 nm and a length of 190 to 600 nm depending on the deposition parameters. Substrate distance and RF power showed notable effects on the formation of SnO2nanorods. These high surface area SnO2nanorods showed sensing properties to reducing gases like CO.