Title :
Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study
Author :
Zhao, Zhiya ; Lantz, Kevin R. ; Yi, Changhyun ; Stiff-Roberts, Adrienne D.
Author_Institution :
Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708 USA
Abstract :
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated.
Keywords :
Capacitance-voltage characteristics; Doping; Energy states; Gallium arsenide; Impurities; Infrared detectors; Infrared spectra; Photodetectors; Quantum dots; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431210
