• DocumentCode
    2785636
  • Title

    Unusual Growth of InP Nanowires Grown on Silicon Surfaces

  • Author

    Kimukin, Ibrahim ; Johns, Chad D. ; Edgar, Christopher W. ; Islam, M. Saif ; Yi, Sungsoo ; Kimukin, I. ; Johns, C.D. ; Edgar, C.W. ; Islam, Md Shariful ; Sungsoo Yi

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California, Davis, CA, 95616, USA
  • Volume
    2
  • fYear
    2006
  • fDate
    17-20 June 2006
  • Firstpage
    620
  • Lastpage
    623
  • Abstract
    Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on
  • Keywords
    Absorption; Atomic layer deposition; Gallium arsenide; Gold; Indium phosphide; Lattices; Nanowires; Optical microscopy; Scanning electron microscopy; Silicon; InP; MOCVD Growth; Nanowire; Si;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
  • Print_ISBN
    1-4244-0077-5
  • Type

    conf

  • DOI
    10.1109/NANO.2006.247730
  • Filename
    1717180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2785636